超级法拉电容1400F
我们凭借前沿科技，为中东和非洲地区持续革新家庭与工商业储能解决方案，全力推动当地能源存储的高效利用与绿色可持续发展。
Ferroelectric Memories
In the past year it has become possible to fabricate ferroelectric thin-film memories onto standard silicon integrated circuits that combine very high speed (30-nanosecond read/erase/rewrite operation), 5-volt standard silicon logic levels, very high density (2 by 2 micrometer cell size), complete nonvolatility (no standby power required), and extreme radiation hardness.